Part Number: 30F124.
Function : Discrete 300V, 200A, Insulated-Gate Bipolar Transistor (IGBT)
Package : (TO-220SIS) Type
Manufactured by: Toshiba
The Toshiba Discrete 30F124 IGBTs.
Introduction
The 30F124 is a three-terminal power semiconductor device majorly used as an electronic switch; Toshiba developed it to combine high efficiency and fast switching. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure
Different voltage and current ratings are available for the Toshiba discrete 30F124 IGBTs, including high voltage and high current options. The 30F124 are utilized as inverters and power conversion circuits in various applications, including motor drivers, uninterruptible power supply (UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes, and similar devices.
Features
(1) the 30F124 Toshiba discrete IGBTs are also characterized by their rapid switching.
(2) Even in the high current area, the collector-emitter saturation voltage remains low.
(3) Inductively coupled bipolar transistors (IGBTs) with a built-in diode with excellent properties customized to certain applications
(4) A high input impedance enables voltage drivers to be used.
(5) A range of packaging options are available.
Application: used in plasma display panels
In the drive circuitry of plasma display panels, parallel MOSFETs have been employed in parallel configuration (PDPs) such as the 30F124 IGBTs. The 30F124 has been increasingly popular in high-current applications in recent years, owing to their higher current conduction capabilities.
